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Effect of nitrogen doping on the minority carrier lifetime in Czochralski siliconCAN CUI; DEREN YANG; XUEGONG YU et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 373-378, issn 0167-9317, 6 p.Conference Paper

DC field response of hot carriers under circular polarized intense microwave fields in semiconductors limited to two-dimensionISHIDA, Norihisa.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 691-693, issn 0959-8324, 3 p.Conference Paper

Spatially selective laser cooling of carriers in semiconductor quantum wellsDANHONG HUANG; APOSTOLOVA, T; ALSING, P. M et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 195308.1-195308.8, issn 1098-0121Article

Study of traps in polydiacetylene based devices using TSC techniqueRENAUD, C; HUANG, C. H; ZEMMOURI, M et al.EPJ. Applied physics (Print). 2006, Vol 36, Num 3, pp 215-218, issn 1286-0042, 4 p.Article

Grain-size-related transient terahertz mobility of femtosecond-laser-annealed polycrystalline siliconWANG, Y.-C; AHN, H; CHUANG, C.-H et al.Applied physics. B, Lasers and optics (Print). 2009, Vol 97, Num 1, pp 181-185, issn 0946-2171, 5 p.Article

Density functional theory description of hole-trapping in SiO₂ : A self-interaction-corrected approachD'AVEZAC, Mayeul; CALANDRA, Matteo; MAURI, Francesco et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 20, pp 205210.1-205210.5, issn 1098-0121Article

Laser modulated IR transmission of semiconductorsDIETZEL, D; GIBKES, J; CHOTIKAPRAKHAN, S et al.Journal de physique. IV. 2005, Vol 125, pp 635-638, issn 1155-4339, 4 p.Conference Paper

Analytical description of mirror plot in insulating targetGHORBEL, N; KALLEL, A; DAMAMME, G et al.EPJ. Applied physics (Print). 2006, Vol 36, Num 3, pp 271-279, issn 1286-0042, 9 p.Article

A contribution to the theory of the C-V technique for the evaluation of carrier-concentration profiles in semiconductorsYAREMCHUK, A. F.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 4, pp 881-883, issn 0947-8396, 3 p.Article

Trap concentration dependence of thermally stimulated currents in small molecule organic materialsWEISE, Wieland; KEITH, Torsten; VON MALM, Norwin et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 4, pp 045202.1-045202.7, issn 1098-0121Article

Recombination activity of manganese in p-and n-type crystalline siliconMACDONALD, D; ROSENITS, P; DEENAPANRAY, P. N. K et al.Semiconductor science and technology. 2007, Vol 22, Num 2, pp 163-167, issn 0268-1242, 5 p.Article

Minority carrier bulk lifetimes through a large multicrystalline silicon ingot and related solar cell propertiesMARTINUZZI, S; GAUTHIER, M; BARAKEL, D et al.EPJ. Applied physics (Print). 2007, Vol 40, Num 1, pp 83-88, issn 1286-0042, 6 p.Article

Electron self-trapping and the fluctuation density-of-states tail at the critical pointAUSLENDER, M. I; KATSNELSON, M. I.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 11, pp 113107.1-113107.4, issn 1098-0121Article

Location of lanthanide impurity energy levels in the III-V semiconductor Al_xGa_1-xN (0 ≤ x ≤ 1)DORENBOS, P; VAN DER KOLK, E.Optical materials (Amsterdam). 2008, Vol 30, Num 7, pp 1052-1057, issn 0925-3467, 6 p.Conference Paper

Spatial distribution of a hole localized on a magnetic acceptor in cubic crystalsMONAKHOV, A. M; ROMANOV, K. S; PANAIOTTI, I. E et al.Solid state communications. 2006, Vol 140, Num 9-10, pp 422-425, issn 0038-1098, 4 p.Article

The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing techniqueNEIMONTAS, K; MALINAUSKAS, T; ALEKSIEJUNAS, R et al.Semiconductor science and technology. 2006, Vol 21, Num 7, pp 952-958, issn 0268-1242, 7 p.Article

Impact of nickel contamination on carrier recombination in n- and p-type crystalline silicon wafersMACDONALD, D.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 8, pp 1619-1625, issn 0947-8396, 7 p.Article

Relationship between composition and charge carrier concentration in Eu₈Ga_16-xGe_30+x clathratesPACHECO, V; BENTIEN, A; CARRILLO-CABRERA, W et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 16, pp 165205.1-165205.10, issn 1098-0121Article

The discretization of minority carrier generation kinetics at the semiconductor surface bordering inhomogeneous insulatorGULYAEV, Yu. V; ZHDAN, A. G; GOLDMAN, E. I et al.SPIE proceedings series. 2004, pp 426-431, isbn 0-8194-5324-2, 6 p.Conference Paper

Determination of the diffusion length and the optical self absorption coefficient using EBIC modelGUERMAZI, S; GUERMAZI, H; MLIK, Y et al.EPJ. Applied physics (Print). 2001, Vol 16, Num 1, pp 45-51, issn 1286-0042Article

Ultrafast carrier relaxation and diffusion dynamics in ZnOCOOK, C. J; KHAN, S; SANDERS, G. D et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7603, issn 0277-786X, isbn 978-0-8194-7999-0 0-8194-7999-3, 1Vol, 760304.1-760304.14Conference Paper

Modeling interface trapping effect in organic field-effect transistor under illuminationKWOK, H. L.Applied physics. B, Lasers and optics (Print). 2009, Vol 94, Num 2, pp 279-282, issn 0946-2171, 4 p.Article

Reactivation of damaged rare earth luminescence centers in ion-implanted metal-oxide-silicon light emitting devicesPRUCNAL, S; REBOHLE, L; NAZAROV, A. N et al.Applied physics. B, Lasers and optics (Print). 2008, Vol 91, Num 1, pp 123-126, issn 0946-2171, 4 p.Article

Space Charge and Carrier Trapping Effects on the Transient Photocurrents of Organic Materials Using the Time-of-Flight TechniqueCUSUMANO, P; GAMBINO, S.Journal of electronic materials. 2008, Vol 37, Num 3, pp 231-239, issn 0361-5235, 9 p.Article